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HGT1Y40N60B3D
Data Sheet December 2001
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49052. The diode used in anti-parallel with the IGBT is the development type TA49063. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49365.
Symbol
C
G
E
Features
* 70A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . 100ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss
Ordering Information
PART NUMBER HGT1Y40N60B3D PACKAGE TO-264 BRAND G40N60B3D
Packaging
JEDEC STYLE TO-264
E C G
NOTE: When ordering, use the entire part number.
COLLECTOR (FLANGE)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGT1Y40N60B3D Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 70 40 40 330 20 30 100A at 600V 290 2.33 100 -55 to 150 260 2 10 W W/oC mJ
oC oC
UNITS V
600
A A A A V V
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, R G = 3.
S
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 VCE = 480V VCE = 600V 200 100 TYP 1.4 1.5 4.8 MAX 100 6.0 2.0 2.3 6.0 100 UNITS V A mA V V V nA A A
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA
VGE(TH) IGES SSOA
IC = 250A, VCE = VGE VGE = 20V TJ = 150oC RG = 3 VGE = 15V L = 100H
Gate to Emitter Plateau Voltage On-State Gate Charge
VGEP QG(ON)
IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V
-
7.5 250 335 47 35 170 50 1050 800
330 435 200 100 1200 1400
V nC nC ns ns ns ns J J
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1)
td(ON)I trI td(OFF)I tfI EON EOFF
IGBT and Diode Both at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3 L = 100H Test Circuit (Figure 19)
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 1) Diode Forward Voltage Diode Reverse Recovery Time TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 40A IEC = 40A, dIEC/dt = 100A/s IEC = 1.0A, dIEC/dt = 100A/s Thermal Resistance Junction To Case Thermal Resistance Junction To Case NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. RJC RJC IGBT Diode TEST CONDITIONS IGBT and Diode Both at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3 L = 100H Test Circuit (Figure 19) MIN TYP 47 35 285 100 1850 2000 2.0 50 38 MAX 375 175 2.5 65 40 0.43 1.2 UNITS ns ns ns ns J J V ns ns
oC/W oC/W
Typical Performance Curves
100 ICE , DC COLLECTOR CURRENT (A)
(Unless Otherwise Specified)
ICE, COLLECTOR TO EMITTER CURRENT (A)
250 TJ = 150oC, RG = 3, VGE = 15V 200
VGE = 15V 80
60 PACKAGE LIMITED 40
150
100
20
50
0 25
0 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D Typical Performance Curves
fMAX, OPERATING FREQUENCY (kHz)
(Unless Otherwise Specified) (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (s) ISC, PEAK SHORT CIRCUIT CURRENT (A) 4 18 VCE = 360V, RG = 3, TJ = 125oC 16 14 12 10 8 6 4 10 tSC ISC 800 700 600 500 400 300 200 15 900
TJ = 150oC, RG = 3, L = 100H, V CE = 480V 100 TC 75 oC 75oC 110oC 110oC VGE 15V 10V 15V 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF ) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.43 oC/W, SEE NOTES
1 10
20
40
60
80
100
11
12
13
14
ICE , COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A) 200 DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250s 150 TC = -55oC ICE, COLLECTOR TO EMITTER CURRENT (A) 200
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250s 150 TC = -55 oC TC = 150 oC 100 TC = 25 oC
TC = 150 oC
100
TC = 25oC
50
50
0
0
1
2
3
4
5
0 0 1 2 3 VCE , COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
20 EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) RG = 3, L = 100H, VCE = 480V 16
8 RG = 3, L = 100H, VCE = 480V
TJ = 25 oC, VGE = 10V TJ = 150oC, VGE = 10V
6 TJ = 150oC; VGE = 10V AND 15V
12
8
TJ = 150 oC, VGE = 15V
4
2 TJ = 25oC; VGE = 10V AND 15V 0 20 40 60 80 100
4 TJ = 25oC, VGE = 15V 0 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D Typical Performance Curves
90 RG = 3, L = 100H, VCE = 480V tdI , TURN-ON DELAY TIME (ns) 80 70 60 TJ = 25oC, VGE = 15V 50 40 30 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 150 oC, VGE = 15V trI , RISE TIME (ns) TJ = 25oC, VGE = 10V TJ = 150oC, VGE = 10V 500 400 TJ = 150 oC, VGE = 10V 300 200 100 0 20 40 60 80 100 I CE , COLLECTOR TO EMITTER CURRENT (A)
(Unless Otherwise Specified) (Continued)
600 RG = 3, L = 100H, VCE = 480V TJ = 25 oC, VGE = 10V
TJ = 25 oC AND 150oC, VGE = 10V AND 15V
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
300 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 3, L = 100H, VCE = 480V TJ = 150oC, VGE = 15V TJ = 150 oC, VGE = 10V 200 TJ = 25oC, VGE = 15V 150 TJ = 25 oC, VGE = 15V 100 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
180 RG = 3, L = 100H, VCE = 480V
tfI , FALL TIME (ns)
250
140
TJ = 150oC, VGE = 10V AND 15V
100
60
TJ = 25 oC, VGE = 10V AND 15V
20 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE = <0.5%, VCE = 10V PULSE DURATION = 25s 160
VGE, GATE TO EMITTER VOLTAGE (V)
200
15
Ig(REF) = 3.255mA, RL = 7.5, TC = 25 oC VCE = 400V VCE = 600V
12
120
9
80
6 VCE = 200V 3
TC = 25oC TC = 150oC
40
TC = -55oC 6 7 8 9 10
0 4 5 VGE, GATE TO EMITTER VOLTAGE (V)
0 0 50 100 150 200 250 300 QG, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORM
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D Typical Performance Curves
200
(Unless Otherwise Specified) (Continued)
60 TC = 25oC, dIEC/dt = 100A/s 50 tr , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
trr
40 30 20 10 0
100oC 10
ta tb
150 oC 1 0
25oC
0.5
1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V)
2.5
3.0
1
5 10 IEC , FORWARD CURRENT (A)
30
FIGURE 15. VfDIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 16. RECOVERY TIMES vs FORWARD CURRENT
14 FREQUENCY = 400kHz 12 C, CAPACITANCE (nF) CIES 10 8 6 4 COES 2 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
ZJC , NORMALIZED THERMAL IMPEDANCE
100 0.5
0.2 10 -1 0.1 0.05 t1 0.02 0.01 10 -2 10-5 10-4 SINGLE PULSE 10-3 10-2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X R JC) + TC 10-1 100 PD t2 10 1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 18. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D Test Circuit and Waveform
L = 100H RHRP3060 VGE RG = 3 + VDD = 480V ICE
90% 10% EON EOFF VCE 90% 10% td(OFF)I tfI trI td(ON)I
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. SWITCHING TEST WAVEFORM
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
HGT1Y40N60B3D Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 10. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed P D . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (V CE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x V CE) during turn-on and E OFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
(c)2001 Fairchild Semiconductor Corporation
HGTG40N60B3 Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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